PTFA260451E V1

PTFA260451E Thermally-Enhanced High Power RF LDMOS FET 45 W, 2.62 – 2.68 GHz Description The PTFA260451E is a thermally-enhanced 45-watt, internallymatched GOLDMOS ® FET intended for CDMA2000, Super3G (3GPP TSG RAN), and WiMAX applications from 2.62 to 2.68 GHz. Thermallyenhanced packaging provide the coolest operation available. Full gold metallization ensures excellent device lifetime and reliability. Features 3-Carrier CDMA2000 Performance VDD = 28 V, IDQ = 500 mA, ƒ = 2680 MHz -45 Drain Efficiency (%) 50 Alt_1 2.5 MHz -50 40 Adj 2.135 MHz 30 -55 20 -60 Efficiency -65 Adj. Ch. Power Ratio (dBc) -40 60 10 -70 0 25 30 35 40 45 PTFA260451E Package H-30265-2 50 Output Power, Avg. (dBm) • Lead-free, RoHS-compliant and thermallyenhanced packaging • Internal matching for wideband performance • Typical three-carrier CDMA2000 performance - Average output power = 10 W - Gain = 14 dB - Efficiency = 24% - ACPR = –52 dBc • Typical CW performance - Output power at P–1dB = 50 W - Efficiency = 46% • Integrated ESD protection: Human Body Model, Class 2 (minimum) • Excellent thermal stability • Low HCI Drift • Capable of handling 10:1 VSWR @ 28 V, 45 W (CW) output power RF Performance CDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 500 mA, POUT = 10 W AVG, ƒ = 2680 MHz Characteristic Symbol Min Typ Max Unit ACPR — –45 — dBc Gain Gps — 14 — dB Drain Efficiency ηD — 24 — % Adjacent Channel Power Ratio All published data at TCASE = 25°C unless otherwise indicated *See Infineon distributor for future availability. ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 10 Rev. 06, 2008-03-04 PTFA260451E RF Performance (cont.) Two-tone Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 500 mA, POUT = 45 W PEP, ƒ = 2680 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps 14.0 15 — dB Drain Efficiency ηD 36 37 — % Intermodulation Distortion IMD — –30 –28 dBc DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, ID = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, V GS = 0 V IDSS — — 1.0 µA VDS = 63 V, V GS = 0 V IDSS — — 10.0 µA RDS(on) — 0.16 — Ω On-State Resistance VGS = 10 V, V DS = 0.1 V Operating Gate Voltage VDS = 28 V, IDQ = 500 mA VGS 2.0 2.5 3 V Gate Leakage Current VGS = 10 V, V DS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –0.5 to +12 V Junction Temperature TJ 200 °C Total Device Dissipation PD 199 W 1.14 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C, 45 W CW) RθJC 0.88 °C/W Ordering Information Type and Version Package Outline Package Description Marking PTFA260451E H-30265-2 Thermally-enhanced slotted flange, single-ended PTFA260451E V1 *See Infineon distributor for future availability. Data Sheet 2 of 10 Rev. 06, 2008-03-04 PTFA260451E Typical Performance (data taken in production test fixture) IS-95 CDMA Performance 3-Carrier CDMA2000 Performance VDD = 28 V, IDQ = 500 mA, ƒ = 2680 MHz VDD = 28 V, IDQ = 500 mA, ƒ = 2680 MHz TCASE = 25°C TCASE = 85°C 40 -50 -55 32 24 -60 16 -65 Efficiency 8 -70 25 30 35 40 -45 Alt_1 2.5 MHz 40 -50 Adj 2.135 MHz -55 30 20 -65 -70 0 25 30 35 40 45 Output Power (dBm), Avg. Output Power, Avg. (dBm) Gain & Efficiency vs. Output Power Gain vs. Output Power VDD = 28 V, IDQ = 500 mA, ƒ = 2680 MHz VDD = 28 V, ƒ = 2680 MHz 14 40 13 30 20 Efficiency 11 Power Gain (dB) 50 Drain Efficiency (%) 15 12 IDQ = 650 mA 60 Gain 50 17 70 16 -60 Efficiency 10 45 17 Gain (dB) 50 -75 0 -40 TCASE = 85°C Adj. Ch. Power Ratio (dBc) -45 Adj 750 kHz 60 Drain Efficiency (%) Alt1 1.98 MHz 48 Drain Efficiency (%) TCASE = 25°C -40 Adj. Ch. Power Ratio (dBc) 56 16 15 IDQ = 500 mA 14 IDQ = 350 mA 10 0 10 25 30 35 40 45 50 13 55 25 Output Power (dBm) Data Sheet 30 35 40 45 50 Output Power (dBm) 3 of 10 Rev. 06, 2008-03-04 PTFA260451E Typical Performance (cont.) Broadband Performance Output Power vs. Supply Voltage VDD = 28 V, IDQ = 500 mA, POUT = 4 W IDQ = 500 mA, ƒ = 2680 MHz 48 0 16 -5 Gain -10 14 Return Loss 13 12 2600 2620 2640 2660 2680 -15 Output Power (dBm) 15 Return Loss (dB) Gain (dB), Efficiency (%) Efficiency 47 46 45 -20 2700 22 24 Frequency (MHz) 26 28 30 32 34 Supply Voltage (V) Intermodulation Distortion vs. Output Power Bias Voltage vs. Temperature VDD = 28 V, IDQ = 500 mA, ƒ1 = 2679 MHz, ƒ 2 = 2680 MHz Voltage normalized to typical gate voltage, series show current Normalized Bias Voltage (V) -20 IMD (dBc) -30 3rd Order -40 5th -50 -60 7th 35 40 45 50 1.02 0.28 A 0.46 A 1.01 0.70 A 1.00 1.39 A 0.99 2.09 A 0.98 2.78 A 3.48 A 0.97 4.17 A 0.96 0 20 40 60 80 100 Case Temperature (°C) Output Power, PEP (dBm) Data Sheet 0.09 A 0.95 -20 -70 30 1.03 4 of 10 Rev. 06, 2008-03-04 PTFA260451E WiMAX Performance WiMAX Performance VDD = 28 V, IDQ = 450 mA, (modulation = 64 QAM2/3, channel bandwidth = 3.5 MHz, sample rate = 4 MHz) 35 -15 Efficiency 30 -20 ƒ = 2.62 GHz ƒ = 2.68 GHz 25 -25 ƒ = 2.65 GHz 20 -30 VDD = 28 V, IDQ = 450 mA, ƒ = 2650 MHz, (modulation = 64 QAM2/3, channel bandwidth = 3.5 MHz, sample rate = 4 MHz) -15 t = +25 °C EVM (dB) -20 EVM (dBc) Efficiency (%) Typical WiMAX Performance -25 -30 15 -35 10 -40 5 -45 -40 0 -50 -45 t = –20 °C -35 t = +85 °C 15 20 25 30 35 40 45 15 Output Power (dBm) 20 25 30 35 40 45 Output Power (dBm) WiMAX Performance VDD = 28 V, ƒ = 2650 MHz (modulation = 64 QAM2/3, channel bandwidth = 3.5 MHz, sample rate = 4 MHz) -20 EVM (dB) -25 IDQ = 730 mA -30 IDQ = 270 mA -35 IDQ = 450 mA -40 -45 15 20 25 30 35 40 45 Output Power (dBm) Data Sheet 5 of 10 Rev. 06, 2008-03-04 PTFA260451E Broadband Circuit Impedance Z Source Ω Frequency D Z Source Z Load G HS T OW S MHz R jX R jX 2600 19.5 –1.5 7.5 –0.7 2620 17.0 –2.1 7.3 –0.5 2650 18.6 0.8 7.0 –0.3 2680 19.0 –0.8 6.8 0.1 2700 18.0 –3.0 6.7 0.2 Z0 = 50 Ω 2700 MHz 0.5 0.3 0.2 2600 MHz 0.4 Z Source Z Load 0.1 0.0 0 .1 2600 MHz 2700 MHz 0.1 EL EN DT OW ARD LOA GTHS Z Load Ω See next page for reference circuit information Data Sheet 6 of 10 Rev. 06, 2008-03-04 PTFA260451E Reference Circuit C1 0.001µF R1 1.3K V R2 1.2K V QQ1 LM7805 V DD Q1 BCP56 C2 0.001µF C3 0.001µF R3 2KV R4 2K V R5 1.0K V C4 10 µF 35V R6 10V L1 R7 1K V C5 0.1µF C6 4.7pF C9 4.7pF l4 R8 10 V l1 C19 4.7pF DUT l2 l3 l5 l6 l7 l10 C8 1.2pF V DD C12 10µF 50V C11 .1µF l8 C7 4.7pF RF_IN C10 1µF l11 l12 l13 C17 0.4pF l9 l14 RF_OUT C18 1.2pF L2 C13 4.7pF C14 1µF C15 .1µF C16 10µF 50V a260451ef_sch Reference circuit schematic for ƒ = 2680 MHz Circuit Assembly Information DUT PTFA260451E PCB 0.76 mm [.030"] thick, εr = 4.5 Microstrip l1 l2 l3 l4 l5 l6 l7 l8 l9 l10 l11 (taper) l12 l13 l14 LDMOS Transistor Rogers TMM4 Electrical Characteristics at 2680 MHz 1 Dimensions: L x W (mm) 0.130 0.061 0.065 0.299 0.018 0.029 0.077 0.234 0.218 0.050 0.080 0.053 0.133 0.070 λ, 50.0 Ω λ, 44.0 Ω λ, 44.0 Ω λ, 62.0 Ω λ, 44.0 Ω λ, 15.0 Ω λ, 12.5 Ω λ, 55.0 Ω λ, 55.0 Ω λ, 6.6 Ω λ, 6.6 Ω / 50.0 Ω λ, 50.0 Ω λ, 50.0 Ω λ, 50.0 Ω 7.87 x 1.47 3.68 x 1.83 3.91 x 1.83 18.44 x 1.02 1.09 x 1.83 1.65 x 7.62 4.32 x 9.45 14.33 x 1.27 13.36 x 1.27 2.74 x 19.10 4.90 x 19.10 / 1.32 3.25 x 1.32 8.13 x 1.32 4.27 x 1.32 2 oz. copper Dimensions: L x W (in.) 0.310 0.145 0.154 0.726 0.043 0.065 0.170 0.564 0.526 0.108 0.193 0.128 0.320 0.168 x 0.058 x 0.072 x 0.072 x 0.040 x 0.072 x 0.300 x 0.372 x 0.050 x 0.050 x 0.752 x 0.752 / 0.052 x 0.052 x 0.052 x 0.052 1Electrical characteristics are rounded. Data Sheet 7 of 10 Rev. 06, 2008-03-04 PTFA260451E Reference Circuit (cont.) R5 C5 R4 + C4 R3 C3 C1 C10 VDD QQ1 C2 10 R2 35V R1 C9 L1 Q1 R6 R7 C6 V DD C12 C11 C17 R8 RF_IN C7 C19 RF_OUT C18 C8 VDD C15 C16 L2 C13 C14 a260451ef _assy Reference circuit assembly diagram* (not to scale) Component Description C1, C2, C3 Capacitor, 0.001 µF C4 Tantalum capacitor, 10 µF, 35 V C5, C11, C15 Capacitor, 0.1 µF C6, C7, C9, C13, C19 Ceramic capacitor, 4.7 pF C8, C18 Ceramic capacitor, 1.2 pF C10, C14 Capacitor, 1 µF C12, C16 Tantalum capacitor, 10 µF, 50 V C17 Ceramic capacitor, 0.4 pF Q1 Transistor QQ1 Voltage regulator R1 Chip resistor, 1.3 k-ohms R2 Chip resistor, 1.2 k-ohms R3 Chip resistor, 2 k-ohms R4 Potentiometer, 2 k-ohms R5, R7 Chip resistor, 1 k-ohms R6, R8 Chip resistor, 10 ohms L1, L2 Ferrite Suggested Manufacturer P/N or Comment Digi-Key Digi-Key Digi-Key ATC ATC ATC Garrett Electronics ATC Infineon Technologies National Semiconductor Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Philips PCC1772CT-ND PCS6106TR-ND PCC104BCT-ND 100B 4R7 100B 1R2 920C105KW TPSE106K050R0400 100B 0R4 BCP56 LM7805 P1.3KGCT-ND P1.2KGCT-ND P2.0KECT-ND 3224W-202ETR-ND P1.0KECT-ND P10ECT-ND BDS46/3.8.8-452 *Gerber Files for this circuit available on request Data Sheet 8 of 10 Rev. 06, 2008-03-04 PTFA260451E Package Outline Specifications Package H-30265-2 7.11 [.280] (45° X 2.03 [.080]) CL D S 2X 2.59±0.38 [.107 ±.015] CL FLANGE 9.78 [.385] 15.60±0.51 [.614±.020] LID 10.16±0.25 [.400±.010] G 2X R1.60 [.063] 2x 7.11 [.280] 4x 1.52 [.060] 15.23 [.600] 10.16±0.25 [.400±.010] SPH 1.57 [.062] 3.48±0.38 [.137±.015] 0.0381 [.0015] -A- 20.31 [.800] 1.02 [.040] H-30265-2-1-2303 Diagram Notes: 1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001]. 2. All tolerances ± 0.127 [.005] unless specified otherwise. 3. Pins: D = drain, S = source, G = gate. 4. Interpret dimensions and tolerances per ASME Y14.5M-1994. 5. Primary dimensions are mm. Alternate dimensions are inches. 6. Gold plating thickness: S - flange: 2.54 micron [100 microinch] (min) D, G - leads: 1.14 micron ± 0.38 micron [45 microinch ± 15 microinch] (min) Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Data Sheet 9 of 10 Rev. 06, 2008-03-04 PTFA260451E Confidential, Limited Internal Distribution Revision History: 2008-03-04 2006-07-05, Data Sheet Previous version: Page Subjects (major changes since last revision) Data Sheet All Remove references to alternate products. al page. Misc updates. We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International GOLDMOS® is a registered trademark of Infineon Technologies AG. Edition 2008-03-04 Published by Infineon Technologies AG 81726 Munich, Germany © 2004 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 10 of 10 Rev. 06, 2008-03-04